Abstract: This work proposes a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver circuit with a bootstrapping structure to shorten the falling time of output waveforms ...
Abstract: The BIGT is a Reverse Conducting IGBT device which combines functionality of a high power IGBT and fast diode on a single chip. In this paper, an investigation of the IGBT mode short circuit ...
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