The double-gate (DG) FET provides a fundamental advantage over conventional single-gate (SG) FETs. In short-channel FETs the drain potential competes with that of the gate to influence the channel.

At the December 2021 IEDM conference (a conference for people who design advanced semiconductors), IBM announced it was turning transistors on their heads to keep Moore’s Law scaling alive. The new ...

Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...

Finfet technology, with its 3D structure, is seen as the key semiconductor technology for the next generation of deep sub-micron chip design. Leah Schuth describes how physical IP developers will rise ...

The industry’s quest to continue on the semiconductor roadmap defined by Moore’s Law has led to the adoption of a new transistor structure. Whether you call them finFETs, tri-gate or 3D transistors, ...

The semiconductor industry faces a major change in the way that ICs are made in order to keep improving performance and density, a change that has potential ramifications for design methodologies.

The shift from planar transistors to finFETs is a major inflection point in the IC industry. FinFETs are expected to enable higher performance chips at lower voltages. And the next-generation ...

Samsung sends word that its production ramp-up of the 10-nanometer (nm) FinFET process technology is on track with steady high yields. They also mention 8nm and 6nm. Samsung has shipped more than ...

Microprocessor giant Intel (INTC 5.51%) is currently in mass production on a chip manufacturing technology that it refers to as 14-nanometer+, an improved version of the 14-nanometer technology that ...

Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...